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| {{For|scattering of light|Diffuse reflection}}
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| '''Surface roughness scattering''' or '''interface roughness scattering''' is the [[elastic collision|elastic]] [[scattering]] of a charged particle by an imperfect interface between two different materials. It is an important effect in electronic devices which contain narrow layers, such as [[field effect transistors]] and [[quantum cascade lasers]].<ref>
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| {{citation
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| | last1=Valavanis
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| | first1=A
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| | last2=Ikonić
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| | first2=Z
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| | last3=Kelsall
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| | first3=R. W.
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| | date=2008-02-11
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| | title=Intersubband carrier scattering in ''n''- and ''p''-Si/SiGe quantum wells with diffuse interfaces
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| | journal=Phys. Rev. B
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| | publisher=American Physical Society
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| | volume = 77
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| | issue = 7
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| | pages = 075312
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| | url = http://link.aps.org/abstract/PRB/v77/e075312
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| | doi = 10.1103/PhysRevB.77.075312
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| | accessdate = 2008-03-21
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| |bibcode = 2008PhRvB..77g5312V |arxiv = 0908.0552 }}
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| </ref>
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| ==Description==
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| [[Image:Finite square well.svg|thumb|The energy of charged particles in a quantum well is strongly affected by its thickness]]
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| Interface roughness scattering is most noticeable in [[quantum confinement|confined]] systems, in which the energies for charge carriers are determined by the locations of interfaces. An example of such a system is a [[quantum well]], which may be constructed from a sandwich of different layers of semiconductor. Variations in the thickness of these layers therefore causes the energy of particles to be dependent on their in-plane location in the layer.<ref>
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| {{citation
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| | last1 = Prange
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| | first1 =
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| | last2 = Nee
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| | first2 = Tsu-Wei
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| | title = Quantum Spectroscopy of the Low-Field Oscillations in the Surface Impedance
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| | journal = Phys. Rev.
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| | volume = 168
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| | issue = 3
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| | pages = 779–786
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| |date=April 1968
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| | doi = 10.1103/PhysRev.168.779
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| | publisher = American Physical Society
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| |bibcode = 1968PhRv..168..779P }}</ref> Although the roughness <math>\Delta_z(\mathbf{r})</math> varies in a complicated way on a microscopic scale, it can be considered to exhibit a [[Gaussian distribution]]<ref>
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| {{citation
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| | first1 = H.
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| | last1 = Sakaki
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| | first2 = T.
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| | last2 = Noda
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| | first3 = K.
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| | last3 = Hirakawa
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| | first4 = M.
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| | last4 = Tanaka
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| | first5 = T.
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| | last5 = Matsusue
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| | title = Interface roughness scattering in GaAs/AlAs quantum wells
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| | publisher = AIP
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| | year = 1987
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| | journal = Appl. Phys. Lett.
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| | volume = 51
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| | issue = 23
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| | pages = 1934–1936
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| | url = http://link.aip.org/link/?APL/51/1934/1
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| | doi = 10.1063/1.98305
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| | accessdate = 2008-03-21
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| |bibcode = 1987ApPhL..51.1934S }}</ref> characterised by a height <math>\Delta</math> and a correlation length <math>\Lambda</math> such that
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| :<math>\langle\Delta_z(\mathbf{r})\Delta_z(\mathbf{r'})\rangle = \Delta^2\exp\left(-\frac{|\mathbf{r}-\mathbf{r'}|^2}{\Lambda^2}\right)</math>
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| {{Expand section|date=June 2008}}
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| ==Notes==
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| {{reflist}}
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| {{DEFAULTSORT:Scattering From Rough Surfaces}}
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| [[Category:Scattering]]
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| {{condensedmatter-stub}}
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Social Specialists Tod from Fort McMurray, enjoys to spend some time belly dancing, como ganhar dinheiro na internet and working. Finds the world an enjoyable place we have spent 7 months at Island of Mozambique.
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