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| [[Image:Gummel-Poon1.png|thumb|450px|Schematic of Spice Gummel-Poon Model NPN]]
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| The '''Gummel–Poon model''' is a [[Transistor models|model]] of the [[bipolar junction transistor]]. It was first described in a paper published by [[Hermann Gummel]] and [[H. C. Poon]] at [[Bell Labs]] in 1970.<ref name=gummel>H. K. Gummel and H. C. Poon, "An integral charge control model of bipolar transistors", ''Bell Syst. Tech. J.'', vol. 49, pp. 827–852, May–June 1970</ref>
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| The Gummel–Poon model and modern variants of it are widely used via incorporation in the popular circuit simulators known as [[SPICE]]. A significant effect included in the Gummel–Poon model is the [[direct current]] variation of the transistor <math> \beta_\mathrm{F}</math> and <math> \beta_\mathrm{R}</math>. When certain parameters are omitted, the Gummel–Poon model reduces to the simpler [[Bipolar junction transistor#Ebers–Moll_model|Ebers–Moll model]].<ref name=gummel/>
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| ==Model parameters==
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| Spice Gummel–Poon model parameters
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| {| class="wikitable sortable"
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| |-
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| !#!!Name!!Property<br />Modeled!!Parameter!!Units!!Default<br />Value
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| |-
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| |1||IS||current||transport saturation current||A||1.00E-016
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| |-
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| |2||BF||current||ideal max forward beta||-||100
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| |-
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| |3||NF||current||forward current emission coefficient||-||1
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| |-
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| |4||VAF||current||forward Early voltage||V||inf
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| |-
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| |5||IKF||current||corner for forward beta high current roll-off||A||inf
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| |-
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| |6||ISE||current||B-E leakage saturation current||A||0
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| |-
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| |7||NE||current||B-E leakage emission coefficient||-||1.5
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| |-
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| |8||BR||current||ideal max reverse beta||-||1
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| |-
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| |9||NR||current||reverse current emission coefficient||-||1
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| |-
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| |10||VAR||current||reverse Early voltage||V||inf
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| |-
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| |11||IKR||current||corner for reverse beta high current roll-off||A||inf
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| |-
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| |12||ISC||current||B-C leakage saturation current||A||0
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| |-
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| |13||NC||current||B-C leakage emission coefficient||-||2
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| |-
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| |14||RB||resistance||zero-bias base resistance||ohms||0
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| |-
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| |15||IRB||resistance||current where base resistance falls half-way to its minimum||A||inf
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| |-
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| |16||RBM||resistance||minimum base resistance at high currents||ohms||RB
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| |-
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| |17||RE||resistance||emitter resistance||ohms||0
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| |-
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| |18||RC||resistance||collector resistance||ohms||0
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| |-
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| |19||CJE||capacitance||B-E zero-bias depletion capacitance||F||0
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| |-
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| |20||VJE||capacitance||B-E built-in potential||V||0.75
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| |-
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| |21||MJE||capacitance||B-E junction exponential factor||-||0.33
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| |-
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| |22||TF||capacitance||ideal forward transit time||s||0
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| |-
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| |23||XTF||capacitance||coefficient for bias dependence of TF||-||0
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| |-
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| |24||VTF||capacitance||voltage describing VBC dependence of TF||V||inf
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| |-
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| |25||ITF||capacitance||high-current parameter for effect on TF||A||0
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| |-
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| |26||PTF||||excess phase at freq=1.0/(TF*2PI) Hz||deg||0
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| |-
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| |27||CJC||capacitance||B-C zero-bias depletion capacitance||F||0
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| |-
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| |28||VJC||capacitance||B-C built-in potential||V||0.75
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| |-
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| |29||MJC||capacitance||B-C junction exponential factor||-||0.33
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| |-
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| |30||XCJC||capacitance||fraction of B-C depletion capacitance connected to internal base node||-||1
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| |-
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| |31||TR||capacitance||ideal reverse transit time||s||0
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| |-
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| |32||CJS||capacitance||zero-bias collector-substrate capacitance||F||0
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| |-
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| |33||VJS||capacitance||substrate junction built-in potential||V||0.75
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| |-
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| |34||MJS||capacitance||substrate junction exponential factor||-||0
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| |-
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| |35||XTB||||forward and reverse beta temperature exponent||-||0
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| |-
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| |36||EG||||energy gap for temperature effect of IS||eV||1.1
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| |-
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| |37||XTI||||temperature exponent for effect of IS||-||3
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| |-
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| |38||KF||||flicker-noise coefficient||-||0
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| |-
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| |39||AF||||flicker-noise exponent||-||1
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| |-
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| |40||FC||||coefficient for forward-bias depletion capacitance formula||-||0.5
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| |-
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| |41||TNOM||||parameter measurement temperature||deg.C||27
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| |} <ref>http://virtual.cvut.cz/dynlabmodules/ihtml/dynlabmodules/semicond/node48.html Summary of model with schematics and equations</ref>
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| ==References==
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| {{reflist}}
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| ==External links==
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| * [http://www.alcatel-lucent.com/bstj/vol49-1970/articles/bstj49-5-827.pdf An Integral Charge Control Model of Bipolar Transistors] manuscript
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| * [http://www.alcatel-lucent.com/bstj/vol49-1970/bstj-vol49-issue05.html Bell System Technical Journal, v49: i5 May-June 1970]
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| * [http://virtual.cvut.cz/dynlabmodules/ihtml/dynlabmodules/semicond/node48.html Summary of model with schematics and equations]
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| * [http://www.electronics.oulu.fi/Opetus/ELJK/JUTUT/GP_DOCU.pdf Agilent manual: The Gummel–Poon Bipolar Model] as implemented in the simulator SPICE
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| * [http://www.designers-guide.org/VBIC/documents/ted00.pdf Designers-Guide.org comparison paper] Xiaochong Cao, J. McMacken, K. Stiles, P. Layman, Juin J. Liou, Adelmo Ortiz-Conde, and S. Moinian, "Comparison of the New VBIC and Conventional Gummel–Poon Bipolar Transistor Models," IEEE Trans-ED 47 #2, Feb. 2000.
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| * [http://virtual.cvut.cz/dynlabmodules/ihtml/dynlabmodules/semicond/node48.html The spice Gummel-Poon model] online Course on modeling and simulation.
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| {{DEFAULTSORT:Gummel-Poon model}}
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| [[Category:Transistor modeling]]
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| [[de:Ersatzschaltungen des Bipolartransistors#Gummel-Poon-Modell]]
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