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| [[File:Widlar Patent.PNG |thumb|350px|Diagram from Widlar's [http://patimg1.uspto.gov/.piw?Docid=03320439&homeurl=http%3A%2F%2Fpatft.uspto.gov%2Fnetacgi%2Fnph-Parser%3FSect1%3DPTO2%2526Sect2%3DHITOFF%2526p%3D1%2526u%3D%25252Fnetahtml%25252FPTO%25252Fsearch-bool.html%2526r%3D16%2526f%3DG%2526l%3D50%2526co1%3DAND%2526d%3DPALL%2526s1%3DWidlar.INNM.%2526OS%3DIN%2FWidlar%2526RS%3DIN%2FWidlar&PageNum=&Rtype=&SectionNum=&idkey=NONE&Input=View+first+page original patent] ]]
| | == a Road exit == |
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| A '''Widlar current source''' is a modification of the basic two-[[transistor]] [[current mirror]] that incorporates an emitter degeneration [[resistor]] for only the output transistor, enabling the current source to generate low currents using only moderate resistor values.<ref name=Gray>{{cite book |title=Analysis and design of analog integrated circuits |author=PR Gray, PJ Hurst, SH Lewis & RG Meyer |year=2001 |edition=4th|publisher=John Wiley and Sons |isbn=0-471-32168-0 |url=http://www.worldcat.org/search?q=0471321680&qt=owc_search |pages= §4.4.1.1 pp. 299–303}}</ref><ref name=Sedra>{{cite book |title=Microelectronic circuits |author=AS Sedra and KC Smith |edition=5th |isbn=0-19-514251-9 |year=2004 |publisher=Oxford University Press |url=http://www.worldcat.org/search?q=0195142519&qt=owc_search |nopp=true |pages=Example 6.14, pp. 654–655 }}</ref><ref name=Rashid>{{cite book |title=Microelectronic circuits: analysis and design |author=MH Rashid |year=1999 |publisher=PWS Publishing Co. |isbn=0-534-95174-0 |url=http://www.worldcat.org/search?q=0534951740&qt=owc_search |pages=661–665}}</ref>
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| | 相关的主题文章: |
| | <ul> |
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| | <li>[http://zgbzsq.okdbs.cn/forum.php?mod=viewthread&tid=761149 http://zgbzsq.okdbs.cn/forum.php?mod=viewthread&tid=761149]</li> |
| | |
| | <li>[http://www.haojia.net.cn/plus/feedback.php?aid=8 http://www.haojia.net.cn/plus/feedback.php?aid=8]</li> |
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| | <li>[http://ccliyi.cn/plus/view.php?aid=324571 http://ccliyi.cn/plus/view.php?aid=324571]</li> |
| | |
| | </ul> |
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| The Widlar circuit may be used with [[bipolar transistor]]s, [[MOSFET|MOS transistors]], and even [[vacuum tube]]s. An example application is the [[Operational_amplifier#Internal_circuitry_of_741_type_op-amp|741 operational amplifier]],<ref name=Sedra2>{{cite book |title=§9.4.2, p. 899 |author=AS Sedra and KC Smith |edition=5th |isbn=0-19-514251-9 |year=2004 |url=http://www.worldcat.org/search?q=0195142519&qt=owc_search }}</ref> and Widlar used the circuit as a part in many designs.<ref name=journal>See, for example, Figure 2 in [https://www.utdallas.edu/~hellums/docs/JournalPapers/WidlarBandgap.pdf ''IC voltage regulators''].</ref>
| | == continent == |
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| This circuit is named after its inventor, [[Bob Widlar]], and was patented in 1967.<ref name=patent>RJ Widlar: US Patent Number 03320439; Filed May 26, 1965; Granted May 16, 1967: [http://patimg1.uspto.gov/.piw?Docid=03320439&homeurl=http%3A%2F%2Fpatft.uspto.gov%2Fnetacgi%2Fnph-Parser%3FSect1%3DPTO2%2526Sect2%3DHITOFF%2526p%3D1%2526u%3D%25252Fnetahtml%25252FPTO%25252Fsearch-bool.html%2526r%3D16%2526f%3DG%2526l%3D50%2526co1%3DAND%2526d%3DPALL%2526s1%3DWidlar.INNM.%2526OS%3DIN%2FWidlar%2526RS%3DIN%2FWidlar&PageNum=&Rtype=&SectionNum=&idkey=NONE&Input=View+first+page'' Low-value current source for integrated circuits''] </ref><ref name=Linear>See Widlar: [http://scholar.google.com/scholar?as_q=&num=10&btnG=Search+Scholar&as_epq=emitter+degeneration+resistor+&as_oq=&as_eq=&as_occt=any&as_sauthors=Widlar&as_publication=&as_ylo=1965&as_yhi=1975&as_allsubj=all&hl=en&lr= ''Some circuit design techniques for linear integrated circuits''] and [http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1049994 ''Design techniques for monolithic operational amplifiers'']</ref>
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| | | 相关的主题文章: |
| ==Analysis==
| | <ul> |
| [[File:Widlar Current Source.PNG|thumb|250px|Figure 1: A version of the Widlar current source using bipolar transistors.]]
| | |
| Figure 1 is an example Widlar current source using bipolar transistors, where the emitter resistor R<sub>2</sub> is connected to the output transistor Q<sub>2</sub>, and has the effect of reducing the current in Q<sub>2</sub> relative to Q<sub>1</sub>. The key to this circuit is that the voltage drop across the resistor ''R''<sub>2</sub> subtracts from the base-emitter voltage of transistor ''Q''<sub>2</sub>, thereby turning this transistor off compared to transistor ''Q''<sub>1</sub>. This observation is expressed by equating the base voltage expressions found on either side of the circuit in Figure 1 as:
| | <li>[http://www.share168.com/viewthread.php?tid=72588&extra= http://www.share168.com/viewthread.php?tid=72588&extra=]</li> |
| | | |
| :<math>V_B = V_{BE1} = V_{BE2}+(\beta_2+1)I_{B2}R_2 \ , </math>
| | <li>[http://www.wuliting.com/?action-viewcomment-itemid-1823 http://www.wuliting.com/?action-viewcomment-itemid-1823]</li> |
| | | |
| where β<sub>2</sub> is the beta-value of the output transistor, which is not the same as that of the input transistor, in part because the currents in the two transistors are very different.<ref name=Gray2>{{cite book |title=Figure 2.38, p. 115 |author=PR Gray, PJ Hurst, SH Lewis & RG Meyer |year=2001 |isbn=0-471-32168-0 |url=http://www.worldcat.org/search?q=0471321680&qt=owc_search }}</ref> The variable ''I''<sub>B2</sub> is the base current of the output transistor, ''V''<sub>BE</sub> refers to base-emitter voltage. This equation implies (using the [[Diode_modelling#Shockley_diode_model|Shockley diode law]]):
| | <li>[http://leme.pt/pesquisa/search.cgi http://leme.pt/pesquisa/search.cgi]</li> |
| | | |
| ''Eq. 1''{{anchor|Eq1}}
| | </ul> |
| :<math>(\beta_2+1)I_{B2} =\left(1 + 1/\beta_2 \right) I_{C2} = \frac{V_{BE1} - V_{BE2}}{R_2} = \frac{V_T}{R_2} \ln \left(\frac {I_{C1}I_{S2}}{I_{C2}I_{S1}}\right)\ , </math>
| |
| where ''V''<sub>T</sub> is the [[Boltzmann constant#Role in semiconductor physics: the thermal voltage|thermal voltage]].
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| This equation makes the approximation that the currents are both much larger than the ''scale currents'' ''I''<sub>S1</sub>, ''I''<sub>S2</sub>, an approximation valid except for current levels near [[Bipolar_junction_transistor#Regions_of_operation|cut off]]. In the following the distinction between the two scale currents is dropped, although the difference can be important, for example, if the two transistors are chosen with different areas.
| |
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| ==Design procedure with specified currents==
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| To design the mirror, the output current must be related to the two resistor values ''R''<sub>1</sub> and ''R''<sub>2</sub>. A basic observation is that the output transistor is in [[Bipolar_junction_transistor#Regions_of_operation|active mode]] only so long as its collector-base voltage is non-zero. Thus, the simplest bias condition for design of the mirror sets the applied voltage ''V''<sub>A</sub> to equal the base voltage ''V''<sub>B</sub>. This minimum useful value of ''V''<sub>A</sub> is called the ''[[Current mirror#Compliance voltage|compliance voltage]]'' of the current source. With that bias condition, the [[Early effect]] plays no role in the design.<ref name=note1>Of course, one might imagine a design where the output resistance of the mirror is a major consideration. Then a different approach is necessary.</ref>
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| These considerations suggest the following design procedure:
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| * Select the desired output current, ''I''<sub>O</sub> = ''I''<sub>C2</sub>.
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| * Select the reference current, ''I''<sub>R1</sub>, assumed to be larger than the output current, probably considerably larger (that is the purpose of the circuit).
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| * Determine the input collector current of ''Q''<sub>1</sub>, ''I''<sub>C1</sub>:
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| ::<math>I_{C1} = \frac{\beta_1}{\beta_1+1} \left( I_{R1}-I_{C2}/\beta_2 \right)\ . </math>
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| * Determine the base voltage ''V''<sub>BE1</sub> using the [[Diode_modelling#Shockley_diode_model|Shockley diode law]]
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| ::<math> V_{BE1} = V_T \ln \left(\frac{I_{C1}} {I_S} \right) = V_A\ . </math>
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| :where ''I''<sub>S</sub> is a device parameter sometimes called the ''scale current''.
| |
| :The value of base voltage also sets the compliance voltage ''V''<sub>A</sub> = ''V''<sub>BE1</sub>. This voltage is the lowest voltage for which the mirror works properly.
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| * Determine ''R''<sub>1</sub>:
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| ::<math> R_1 = \frac {V_{CC} - V_A}{I_{R1}}\ . </math>
| |
| {{anchor|R2}}* Determine the emitter leg resistance ''R''<sub>2</sub> using ''[[#Eq1|Eq. 1]]'' (to reduce clutter, the scale currents are chosen equal):
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| ::<math>R_2 = \frac{V_T}{\left(1 + 1/\beta_2 \right) I_{C2}} \ln \left(\frac {I_{C1}}{I_{C2}}\right)\ . </math> | |
| | |
| ==Finding the current with given resistor values==
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| The inverse of the design problem is finding the current when the resistor values are known. An iterative method is described next. Assume the current source is biased so the collector-base voltage of the output transistor ''Q''<sub>2</sub> is zero. The current through ''R''<sub>1</sub> is the input or reference current given as,
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| :<math>I_{R1} = I_{C1} + I_{B1} + I_{B2} \ </math>
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| ::<math>= I_{C1} + \frac{I_{C1}}{\beta_1} + \frac{I_{C2}}{\beta_2}</math>
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| ::<math> = \frac{V_{CC}-V_{BE1}}{R_1} \ . </math>
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| Rearranging, ''I''<sub>C1</sub> is found as:
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| ''Eq. 2''{{anchor|Eq2}}
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| :<math>I_{C1} =\frac{\beta_1}{\beta_1+1} \left( \frac {V_{CC}-V_{BE1}}{R_1}-\frac{I_{C2}}{\beta_2} \right) </math>
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| The diode equation provides:
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| {{anchor|Eq3}}''Eq. 3''
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| :<math>V_{BE1} = V_T \ln \left( \frac{I_{C1}}{I_{S1}}\right) \ . </math>
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| ''[[#Eq1|Eq.1]]'' provides:
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| :<math>I_{C2} = \frac{V_T}{\left(1 + 1/\beta_2 \right) R_2} \ln \left(\frac {I_{C1}}{I_{C2}}\right)\ . </math>
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| These three relations are a nonlinear, implicit determination for the currents that can be solved by iteration.
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| * We guess starting values for ''I''<sub>C1</sub> and ''I''<sub>C2</sub>.
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| * We find a value for ''V''<sub>BE1</sub>:
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| ::<math>V_{BE1} = V_T \ln \left( \frac{I_{C1}}{I_{S1}}\right) \ . </math>
| |
| * We find a new value for ''I''<sub>C1</sub>:
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| ::<math>I_{C1} =\frac{\beta_1}{\beta_1+1} \left( \frac {V_{CC}-V_{BE1}}{R_1}-\frac{I_{C2}}{\beta_2} \right) </math>
| |
| *We find a new value for ''I''<sub>C2</sub>:
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| ::<math>I_{C2} = \frac{V_T}{\left(1 + 1/\beta_2 \right) R_2} \ln \left(\frac {I_{C1}}{I_{C2}}\right)\ . </math>
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| This procedure is repeated to convergence, and is set up conveniently in a spreadsheet. One simply uses a macro to copy the new values into the spreadsheet cells holding the initial values to obtain the solution in short order.
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| Note that with the circuit as shown, if V<sub>CC</sub> changes, the output current will change. Hence, to keep the output current constant despite fluctuations in ''V''<sub>CC</sub>, the circuit should be driven by a [[current source|constant current source]] rather than using the resistor ''R''<sub>1</sub>.
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| ===Exact solution===
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| The [[transcendental equation]]s above can be solved exactly in terms of the [[Lambert W function]].
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| ==Output impedance==
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| [[File:Widlar small-signal.PNG |thumb |350px |Figure 2: Small-signal circuit for finding output resistance of the Widlar source shown in Figure 1. A test current ''I''<sub>x</sub> is applied at the output, and the output resistance is then ''R''<sub>O</sub> = ''V''<sub>x</sub> / ''I''<sub>x</sub>.]]
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| An important property of a current source is its small signal incremental output impedance, which should ideally be infinite. The Widlar circuit introduces local current feedback for transistor <math>Q_{2}</math>. Any increase in the current in ''Q''<sub>2</sub> increases the voltage drop across ''R''<sub>2</sub>, reducing the ''V''<sub>BE</sub> for ''Q''<sub>2</sub>, thereby countering the increase in current. This feedback means the output impedance of the circuit is increased, because the feedback involving ''R''<sub>2</sub> forces use of a larger voltage to drive a given current.
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| Output resistance is found using a small-signal model for the circuit, shown in Figure 2. Transistor ''Q''<sub>1</sub> is replaced by its small-signal emitter resistance ''r''<sub>E</sub> because it is diode connected.<ref name=diode>In a ''diode-connected transistor'' the collector is short-circuited to the base, so the transistor collector-base junction has no time-varying voltage across it. As a result, the transistor behaves like the base-emitter diode, which at low frequencies has a small-signal circuit that is simply the resistor ''r''<sub>E</sub> = ''V''<sub>T</sub> / ''I''<sub>E</sub>, with ''I''<sub>E</sub> the DC [[Q-point]] emitter current. See [[Diode_modelling#Small-signal_modeling|diode small-signal circuit]].</ref> Transistor ''Q''<sub>2</sub> is replaced with its [[hybrid-pi model]]. A test current ''I''<sub>x</sub> is attached at the output.
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| Using the figure, the output resistance is determined using Kirchhoff's laws. Using Kirchhoff's voltage law from the ground on the left to the ground connection of ''R''<sub>2</sub>:
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| :<math>I_b \left( ( R_1 \parallel r_E ) + r_{\pi} \right) + (I_x + I_b ) R_2 = 0 \ . </math>
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| Rearranging:
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| :<math>I_b = -I_x \frac{R_2}{( R_1 \parallel r_E ) + r_{\pi} +R_2} \ . </math>
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| Using Kirchhoff's voltage law from the ground connection of ''R''<sub>2</sub> to the ground of the test current:
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| :<math>V_x=I_x ( r_O +R_2) +I_b (R_2-\beta r_O)\ , </math>
| |
| or, substituting for ''I''<sub>b</sub>:
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| {{anchor|Eq4}}''Eq. 4''
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| :<math>R_O = \frac {V_x} {I_x} = r_O \left( 1+ \frac { \beta R_2} {( R_1 \parallel r_E ) + r_{\pi} +R_2} \right) </math>  <math>+ \ R_2 \left( \frac { ( R_1 \parallel r_E ) + r_{\pi}} {( R_1 \parallel r_E ) + r_{\pi} + R_2 } \right) \ . </math>
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| According to ''[[#Eq4|Eq. 4]]'', the output resistance of the Widlar current source is increased over that of the output transistor itself (which is ''r''<sub>O</sub>) so long as ''R''<sub>2</sub> is large enough compared to the ''r''<sub>π</sub> of the output transistor (large resistances ''R''<sub>2</sub> make the factor multiplying ''r''<sub>O</sub> approach the value (β +1)). The output transistor carries a low current, making ''r''<sub>π</sub> large, and increase in ''R''<sub>2</sub> tends to reduce this current further, causing a correlated increase in ''r''<sub>π</sub>. Therefore, a goal of ''R''<sub>2</sub> >> ''r''<sub>π</sub> can be unrealistic, and further discussion is provided [[#Current dependence of output resistance|below]]. The resistance ''R''<sub>1</sub>//''r''<sub>E</sub> usually is small because the emitter resistance ''r''<sub>E</sub> usually is only a few ohms.
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| ===Current dependence of output resistance===
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| [[File:Widlar Resistance Plot.PNG|thumb|350px|Figure 3: Design trade-off between output resistance and output current.<br/>
| |
| ''Top Panel:'' Circuit output resistance ''R''<sub>O</sub> ''vs.'' DC output current ''I''<sub>C2</sub> using the design formula of ''[[#Eq5|Eq. 5]]'' for ''R''<sub>2</sub> ;<br/>
| |
| ''Center Panel:'' Resistance ''R''<sub>O2</sub> in output transistor emitter leg;<br/>
| |
| ''Bottom Panel:'' Feedback factor contributing to output resistance. Current in the reference transistor ''Q''<sub>1</sub> is held constant, thereby fixing the compliance voltage. Plots assume ''I''<sub>C1</sub> = 10 mA, ''V''<sub>A</sub> = 50 V, ''V''<sub>CC</sub> = 5 V, ''I''<sub>S</sub> = 10 fA, β<sub>1, 2</sub> = 100 independent of current.]]
| |
| The current dependence of the resistances ''r''<sub>π</sub> and ''r''<sub>O</sub> is discussed in the article [[hybrid-pi model]]. The current dependence of the resistor values is:
| |
| :<math>r_{\pi} = \frac{v_{be}}{i_{b}}\Bigg |_{v_{ce}=0} </math>  <math>=\ \frac{V_\mathrm{T}}{I_\mathrm{B2}} = \beta_2\frac{V_\mathrm{T}}{I_\mathrm{C2}}\ ,</math> in [[Ohm (unit)|ohm]]s, and
| |
| :<math> r_O = \frac{v_{ce}}{i_{c}}\Bigg |_{v_{be}=0} </math>  <math>=\ \frac {V_A}{I_{C2}}</math>   is the output resistance due to the [[Early effect]] when ''V''<sub>CB</sub> = 0 V (device parameter ''V''<sub>A</sub> is the Early voltage).
| |
| From [[#R2|earlier]] in this article (setting the scale currents equal for convenience):
| |
| | |
| {{anchor|Eq5}}''Eq. 5''
| |
| :<math>R_2 = \frac{V_T}{\left(1 + 1/\beta_2 \right) I_{C2}} \ln \left(\frac {I_{C1}}{I_{C2}}\right)\ . </math>
| |
| Consequently, for the usual case of small ''r''<sub>E</sub>, and neglecting the second term in ''R''<sub>O</sub> with the expectation that the leading term involving ''r''<sub>O</sub> is much larger:
| |
| | |
| {{Anchor|Eq6}}''Eq. 6''
| |
| :<math>R_O \approx r_O \left( 1+ \frac { \beta_2 R_2} { r_{\pi} +R_2} \right) \ </math> <math>=r_O \left( 1+ \frac { \beta_2\ln \left(\frac {I_{C1}}{I_{C2}}\right)} {\left(\beta_2 + 1 \right) + \ln \left(\frac {I_{C1}}{I_{C2}}\right)} \right) \ , </math>
| |
| | |
| where the last form is found by substituting ''[[#Eq5|Eq. 5]]'' for ''R''<sub>2</sub>. ''[[#Eq6|Eq. 6]]'' shows that a value of output resistance much larger than ''r''<sub>O</sub> of the output transistor results only for designs with ''I''<sub>C1</sub> >> ''I''<sub>C2</sub>. Figure 3 shows that the circuit output resistance ''R''<sub>O</sub> is not determined so much by feedback as by the current dependence of the resistance ''r''<sub>O</sub> of the output transistor (the output resistance in Figure 3 varies four orders of magnitude, while the feedback factor varies only by one order of magnitude).
| |
| | |
| Increase of ''I''<sub>C1</sub> to increase the feedback factor also results in increased compliance voltage, not a good thing as that means the current source operates over a more restricted voltage range. So, for example, with a goal for compliance voltage set, placing an upper limit upon ''I''<sub>C1</sub>, and with a goal for output resistance to be met, the maximum value of output current ''I''<sub>C2</sub> is limited.
| |
| | |
| The center panel in Figure 3 shows the design trade-off between emitter leg resistance and the output current: a lower output current requires a larger leg resistor, and hence a larger area for the design. An upper bound on area therefore sets a lower bound on the output current and an upper bound on the circuit output resistance.
| |
| | |
| ''[[#Eq6|Eq. 6]]'' for ''R''<sub>O</sub> depends upon selecting a value of ''R''<sub>2</sub> according to ''[[#Eq5|Eq. 5]]''. That means ''[[#Eq6|Eq. 6]]'' is not a ''circuit behavior'' formula, but a ''design value'' equation. Once ''R''<sub>2</sub> is selected for a particular design objective using ''[[#Eq5|Eq. 5]]'', thereafter its value is fixed. If circuit operation causes currents, voltages or temperatures to deviate from the designed-for values; then to predict changes in ''R''<sub>O</sub> caused by such deviations, ''[[#Eq4|Eq. 4]]'' should be used, not ''[[#Eq6|Eq. 6]]''.
| |
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| ==See also==
| |
| *[[Current source]]
| |
| *[[Current mirror]]
| |
| *[[Wilson current source]]
| |
| | |
| ==References==
| |
| <references/> | |
| | |
| ==Further reading==
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| *{{cite book |title=Current Sources and Voltage References: A Design Reference for Electronics Engineers|author=Linden T. Harrison |publisher= Elsevier-Newnes |year=2005 |isbn= 0-7506-7752-X |url=http://books.google.com/books?id=03JmxpE39N4C&printsec=frontcover}}
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| *{{cite book |title=Microelectronics: Analysis and Design |author=Sundaram Natarajan |page=319 |url=http://books.google.com/books?id=92LWHJjKcvgC&pg=PA320&lpg=PA320&dq=+%22Widlar+current+source%22&source=web&ots=LFTLwCgje-&sig=SD701CnYP4jRvNigdN9uGYetYqQ&hl=en&sa=X&oi=book_result&resnum=6&ct=result#PPA319,M1
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| |isbn=0-07-059096-6 |publisher=Tata McGraw-Hill |year=2005 }}
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| *[http://sync.cn.nctu.edu.tw/mhcheng/analog-ic/Chap6.pdf Current mirrors and active loads: Mu-Huo Cheng]
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| [[Category:Analog circuits]]
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| [[Category:Electronic design]]
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| [[de:Stromspiegel#Beispiele]]
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