|
|
| Line 1: |
Line 1: |
| The wafer '''bond characterization''' is based on different methods and tests. Considered a high importance of the wafer are the successful bonded wafers without flaws. Those flaws can be caused by void formation in the interface due to unevenness or impurities. The bond connection is characterized for wafer bond development or quality assessment of fabricated wafers and sensors.
| | Machines can have its uses, but to acquire start, look into free a weight load. That means work almost exclusively with barbells and dumb bells. Free [http://t-rexmuscle.net/ T Rex Muscle Review] weights recruit many stabilizing muscles for balance and charge. That means positive will soon work entire more [http://t-rexmuscle.net/ T Rex Muscle Review] parts with the exception of the intended ones. Allow give rise to little bumps, striations and definitions all over your body instead of 1 huge lump of muscle on your intended your muscle. Because of further stimulant created, your muscles grow faster too. Why else are you think all professional body builders almost exclusively use dumbbells.<br><br>Aim maintain a journal when following a workout regime. Jot down the exercises that do, cash advances of sets and reps you do, and other things concerning your regular workout. You should write down how much rest you each night and even how experience during exercise routines. Writing down precisely what you can allows one to better monitor of how one can are doing every single week.<br><br>Creatine. Many people who in order to be bulk up take creatine. Creatine allows your muscles to continue to work hard during a workout, and recover quicker after a fitness. Like most protein supplements, creatine supplements are commonly not licensed by the FDA. Some side effects with creatine include dehydration, diarrhea, and weight benefit from. While taking creatine, require only a few to drink lots of water. The level of water you need can alter from person to person, systems people recommend doubling your intake.<br><br>If you absolutely want start an effective Muscle Building routine, consider getting trainer. A trainer aid you to get and maintain proper form and likewise introduce you exercises you just might canrrrt you create considered preceding. Find one in the local gym or YMCA, and use their services at least twice a week.<br><br>Believe it or not, cardio exercises can aid you to get ripped and leaner in time at all. It takes dedication while keeping to find the results over time, the moment you exercise you can lay feel comfortable that advertising will be rewarded. After each workout, make a high priority to run for 10 mins or bike for half an hour after your training session. This post-workout cardio exercise will help you to build the definition that tend to be looking for within your workouts.<br><br>Exercising is the best things to attend to for endure. It will help you T Rex Muscle Review lose weight faster by increasing your metabolism. You need to exercise is very because some burn more calories other people.<br><br>Mistake 1 - Refusing to eat based rrn your body type. - Dieting with Advanced Mass building solves this problem with a amazing to be able to follow [http://t-rexmuscle.net/ T Rex Muscle Reviews] diet. Most people think that the is single size fits all mass building weight loss plan. This simply is is not really. I am 5' 10" as well as have a stocky build. I needed a certain amount of calories, protein, carbs, ext. for me to gain lean bulk. My diet is in order to be be completely different from my buddy who is 6'5". Considerably more than simply ate the amount that he needs to consume I would end up being a FATTY! |
| | |
| == Overview ==
| |
| Wafer bonds are commonly characterized by three important encapsulation parameters: bond strength, hermeticity of encapsulation and bonding induced stress.<ref name="KGH+2010" />
| |
| | |
| The bond strength can be evaluated using double cantilever beam or chevron respectively micro-chevron tests. Other pull tests as well as burst, shear or bend tests enable the determination of the bond strength.<ref name="Cui2008" /> The packaging hermeticity is characterized using membrane, He-leak, resonator/pressure tests.<ref name="KGH+2010" />
| |
| | |
| Three additional possibilities to evaluate the bond connection are optical, electron and acoustic measurements. At first, optical measurement techniques are optical microscopy, IR transmission microscopy and visual inspection. Secondly, the electron measurement is commonly applied using electron microscopy, e.g. scanning electron microscopy (SEM), high voltage transmittance electron microscopy (HVTEM) and high resolution scanning electron microscopy (HRSEM). And finally, typical acoustic measurement approaches are scanning acoustic microscope (SAM), scanning laser acoustic microscope (SLAM) and C-mode scanning acoustic microscope (C-SAM).
| |
| | |
| The specimen preparation is sophisticated and the mechanical, electronic properties are important for the bonding technology characterization and comparison.<ref name="Mac1997" />
| |
| | |
| == Infrared (IR) transmission microscopy ==
| |
| Infrared (IR) void imaging is possible if the analyzed materials are IR transparent, i.e. silicon. This method gives a rapid qualitative examination<ref name="Far2008b" /> and is very suitable due to its sensitivity to the surface and to the buried interface. It obtains information on chemical nature of surface and interface.
| |
| [[Image:a-ir.png|thumb|right|upright=1.2|Schematic infrared transmission microscopy setup.]] | |
| | |
| Infrared transmitted light is based on the fact that silicon is translucent at wavelength ≥ 1.2 µm. The equipment consists of an infrared lamp as light source and an infrared video system (compare to figure "Schematic infrared transmission microscopy setup").
| |
| | |
| The IR imaging system enables the analysis of the bond wave and additionally micro mechanical structures as well as deformities in the silicon. This procedure allows also to analyze multiple layer bonds.<ref name="Mac1997" /> The image contrast depends on the distance between the wafers. Usually if using monochromatic IR the center of the wafers is display brighter based on the vicinity. Particles in the bond interface generate highly visible spots with differing contrast because of the interference fringes.<ref name="WMC+1996" /> Unbonded areas can be shown if the void opening (height) is ≥ 1 nm.<ref name="Far2008b" />
| |
| | |
| === Fourier transform infrared (FT-IR) spectroscopy ===
| |
| The [[Fourier transform infrared spectroscopy|Fourier transform infrared (FT-IR) spectroscopy]] is a non-destructive hermeticity characterization method. The radiation absorption enables the analysis with a specific wavelength for gases.
| |
| <ref name="LBH+2009" />
| |
| {{-}}
| |
| | |
| == Ultrasonic microscopy ==
| |
| '''Ultrasonic microscopy''' uses high frequency sound waves to image bonded interfaces. [[Deionized water]] is used as the acoustic interconnect medium between the acoustic transducer and the wafer.<ref name="Far2008b" /><ref name="STA2008" />
| |
| | |
| This method works with an ultrasonic transducer scanning the wafer bond. The reflected sound signal is used for the image creation. The lateral resolutions depends on the ultrasonic frequency, the acoustic beam diameter and the signal-to-noise ratio (contrast).
| |
| | |
| Unbonded areas, i.e. impurities or voids, do not reflect the ultrasonic beam like bonded areas, therefore a quality assessment of the bond is possible.<ref name="Mac1997" />
| |
| | |
| == Double cantilever beam (DCB) test ==
| |
| '''Double cantilever beam test''', also referred to as crack opening or razor blade method, is a method to define the strength of the bond. This is achieved by determine the energy of the bonded surfaces. A blade of a specific thickness is inserted between the bonded wafer pair. This leads to a split-up of the bond connection.<ref name="Mac1997" /> The crack length <math>L</math> equals the distance between the blade tip and the crack tip and is determined using IR transmitted light. The IR light is able to illuminate the crack, when using materials transparent to IR or visible light.<ref name="VJL2005" /> Is the fracture surface toughness very high, it is very difficult to insert the blade and the wafers are endangered to break at the slide in of the blade.<ref name="Mac1997" />
| |
| | |
| [[Image:a-dcb1.png|thumb|right|upright=1.2|Blade insertion between the bonded wafers.<ref name="Mac1997" />]]
| |
| | |
| The DCB test characterizes the time dependent strength by mechanical fracture evaluation and is therefore well suited for lifetime predictions.<ref name="NGM2008" /> A disadvantage of this method is, that between the entering of the blade and the time to take the IR image, the results can be influenced. In addition, the measurement inaccuracy increases with a high surface fracture toughness resulting in a smaller crack length or broken wafers at the blade insertion as well as the influence of the fourth power of the measured crack length. The measured crack length determines surface energy <math>\gamma</math> in relation to a rectangular, beam-shaped specimen.
| |
| | |
| <math>\gamma=\frac{3t_b^2E_1t_{w1}^3E_2t_{w2}^3}{16L^4(E_1t_{w1}^3+E_2t_{w2}^3)}</math>
| |
| | |
| Thereby is <math>E</math> the Young's modulus, <math>t_w</math> the wafer thickness, <math>t_b</math> the blade thickness and <math>L</math> the measured crack length.<ref name="WMW+2010" />
| |
| In literature different DCB models are mentioned, i.e. measurement approaches by Maszara, Gillis and Gilman, Srawley and Gross, Kanninen or Williams. The most commonly used approaches are by Maszara or Gillis and Gilman.<ref name="VJL2005" />
| |
| | |
| === Maszara model ===
| |
| The Maszara model neglects shear stress as well as stress in the un-cleaved part for the obtained crack lengths. The compliance of a symmetric DCB specimen is described as follows:
| |
| | |
| <math>C=\frac{8L^3}{E^*wt^3}</math>
| |
| | |
| The compliance is determined out of the crack length <math>L</math>, the width <math>w</math> and the beam thickness <math>t</math>. <math>E^*</math> defines the Young's modulus. The surface fracture energy <math>G_{IC}</math> is:
| |
| | |
| <math>G_{IC}=\frac{3E^* \delta^2 t^3}{16 L^4}</math>
| |
| | |
| with <math>\delta</math> as load-point displacement.
| |
| | |
| === Gillis and Gilman model ===
| |
| The Gillis and Gilman approach considers bend and shear forces in the beam. The compliance equation is:
| |
| | |
| <math>C=\frac{8L^3}{E^*wt^3} \left(1+3c \left(\frac{t}{L}\right)^{2-n}+\frac{\alpha_s E^*}{4 \mu} \left(\frac{t}{L}\right)^2 \right)</math>
| |
| | |
| The first term <math>\frac{8L^3}{E^*wt^3}</math> describes the strain energy in the cantilever due to bending. The second term is the contribution from elastic deformations in the un-cleaved specimen part and the third term considers the shear deformation. Therefore <math>n</math> and <math>c</math> are dependent on the conditions of the fixed end of the cantilever. The shear coefficient <math>\alpha_S</math> is dependent on the cross-section geometry of the beam.
| |
| | |
| ==Chevron test==
| |
| The '''chevron test''' is used to determine the fracture toughness <math>K_{IC}</math> of brittle construction materials. The fracture toughness is a basic material parameter for analyzing the bond strength.
| |
| | |
| The chevron test uses a special notch geometry for the specimen that is loaded with an increasing tensile force. The chevron notch geometry is commonly in shape of a triangle with different bond patterns. At a specific tensile load the crack starts at the chevron tip and grows with continuous applied load until a critical length is reached.<ref name="WFJ+2008" /> The crack growth becomes unstable and accelerates resulting in a fracture of the specimen.<ref name="VJL2005" /> The critical length depends only on the specimen geometry and the loading condition. The fracture toughness commonly <math>K_{IC}</math> is determined by measuring the recorded fracture load of the test. This improves the test quality and accuracy and decreases measurement scatter.<ref name="WFJ+2008" />
| |
| | |
| Two approaches, based on energy release rate <math>G_{I}</math> or stress intensity factor <math>K_{I}</math>, can be used for explaining the chevron test method.<ref name="VJL2005" /> The fracture occurs when <math>K_I</math> or <math>G_I</math> reach a critical value, describing the fracture toughness <math>K_{IC}</math> or <math>G_{IC}</math>.
| |
| The advantage using chevron notch specimen is due to the formation of a specified crack of well-defined length.<ref name="PKB2001" /> The disadvantage of the approach is that the gluing required for loading is time consuming and may induce data scatter due to misalignment.<ref name="VJL2005" />
| |
| {{multiple images|
| |
| | align = left
| |
| | direction = horizontal
| |
| | width = 300
| |
| | header = Chevron test
| |
| | image1 = a-chevron2.png
| |
| | width1 =
| |
| | alt1 =
| |
| | caption1 = Scheme of a chevron test setup.<ref name="VJL2005" />
| |
| | image2 = a-chevron1.png
| |
| | width2 =
| |
| | alt2 =
| |
| | caption2 = Scheme of a chevron notched specimen.<ref name="VJL2005" />
| |
| | image3 = a-chevron3.png
| |
| | width3 =
| |
| | alt3 =
| |
| | caption3 = Schematic chevron notched specimen with cracked area according to Bagdahn.<ref name="PKB2001" />
| |
| }}
| |
| {{-}}
| |
| | |
| === Micro chevron (MC) test ===
| |
| | |
| The '''micro chevron (MC) test''' is a modification of the chevron test using a specimen of defined and reproducible size and shape. The test allows the determination of the critical energy release rate <math>G_{IC}</math> and the critical fracture toughness <math>K_{IC}</math>.<ref name="SRM+2009" /> It is commonly used to characterize the wafer bond strength as well as the reliability. The reliability characterization is determined based on the fracture mechanical evaluation of critical failure.<ref name="NGM2008" /> The evaluation is determined by analyzing the fracture toughness as well as the resistance against crack propagation.<ref name="WMW+2010" />
| |
| | |
| The fracture toughness allows comparison of the strength properties independent on the particular specimen geometry.<ref name="PKB2001" /> In addition, bond strength of the bonded interface can be determined.<ref name="WFJ+2008" /> The chevron specimen is designed out of bonded stripes in shape of a triangle. The space of the tip of the chevron structure triangle is used as lever arm for the applied force. This reduces the force required to initiate the crack. The dimensions of the micro chevron structures are in the range of several millimeters and usually an angle of 70 ° chevron notch.<ref name="SRM+2009" /> This chevron pattern is fabricated using wet or reactive ion etching.<ref name="PKB2001" />
| |
| | |
| The MC test is applied with special specimen stamp glued onto the non-bonded edge of the processed structures. The specimen is loaded in a tensile tester and the load is applied perpendicular to the bonded area. When the load equals the maximum bearable conditions, a crack is initiated at the tip of the chevron notch.´<ref name="SRM+2009" />
| |
| | |
| By increasing the mechanical stress by means of a higher loading, two opposing effects can be observed. First, the resistance against the crack expansion increases based on the increasing bonding of the triangular shaped first half of the chevron pattern. Second, the lever arm is getting longer with increased crack length <math>a</math>. From the critical crack length <math>a_c</math> an instable crack expansion and the destruction of the specimen is initiated.<ref name="SRM+2009" /> The critical crack length <math>a_c</math> corresponds to the maximum force <math>F_{max}</math> in a force-length-diagram and a minimum of the geometric function <math>Y_{MIN}</math>.<ref name="PDE+2006" />
| |
| | |
| The fracture toughness <math>K_{IC}</math> can be calculated with maximum force, width <math>w</math> and thickness <math>t</math>:
| |
| | |
| <math>K_{IC}=\frac{F_{MAX}}{t \cdot \sqrt{w}} \cdot Y_{MIN}</math>
| |
| | |
| The maximum force <math>F_{MAX}</math> is determined during the test and the minimal stress intensity coefficient <math>Y_{MIN}</math> is determined by FE Simulation.<ref name="VWS+2010" /> In addition, the energy release rate <math>G_{IC}</math> can be determined with <math>E</math> as modulus of elasticity and <math>v</math> as Poisson's ratio in the following way.´<ref name="SRM+2009" />
| |
| | |
| <math>G_{IC}=\frac{K^2_{IC}}{E}\cdot (1-v^2)</math>
| |
| | |
| The advantage of this test is the high accuracy compared to other tensile or bend tests. It is an effective, reliable and precise approach for the development of wafer bonds as well as for the quality control of the micro mechanical device production.<ref name="PKB2001" />
| |
| | |
| == Shear test ==
| |
| '''Shear testing''' is a method to determine the average strength and local stress the bonding layer can withstand. It is used to determine the integrity of materials and procedures and evaluate the overall performance of the bonding frame and to compare various bonding technologies with each other.<ref name="NGM2008" /> It is based on measuring the applied force, the failure type due to the applied force and the visual appearance of the residual medium used. The contact tool is required to apply uniform force over the whole contact area. The top tool applies a force on the test medium that is sufficient to shear the specimen. The applied force used equals the maximum shear strength the connection can withstand.<ref name="oDef2003" />
| |
| | |
| A test device as shown in the image is commonly used to determine the shear strength. Two skids are pressed together. The top tool provides the applied force. The bottom tool holds the specimen and is mounted on a movable skid to ensure that only shear forces effect the specimen.
| |
| {{multiple images|
| |
| | align = left
| |
| | direction = horizontal
| |
| | width = 300
| |
| | header = Shear test
| |
| | image1 = a-sheartest1.jpg
| |
| | width1 =
| |
| | alt1 =
| |
| | caption1 = Shear testing device.
| |
| | image2 = a-sheartest2.jpg
| |
| | width2 =
| |
| | alt2 =
| |
| | caption2 = Top and bottom tool with specimen (arrow).
| |
| | image3 = a-sheartest3.jpg
| |
| | width3 =
| |
| | alt3 =
| |
| | caption3 = Shear test with pressure providing top tool and bottom tool on movable skid with specimen (arrow).
| |
| }}
| |
| {{-}}
| |
| | |
| == White Light Interferometers ==
| |
| '''White light interferometry''' is commonly used for detecting deformations of the wafer surface based on optical measurements. Low-coherence light from a white light source passes through the optical top wafer, e.g. glass wafer, to the bond interface. Usually there are three different white light interferometers:
| |
| | |
| * diffraction grating interferometers
| |
| * vertical scanning or coherence probe interferometers
| |
| * white light scatter plate interferometers
| |
| | |
| For the white light interferometer the position of zero order interference fringe and the spacing of the interference fringes needs to be independent of wavelength.<ref name="Wya2002" />
| |
| White light interferometry is utilized to detect deformations of the wafer. Low coherence light from a white light source passes through the top wafer to the sensor. The white light is generated by a halogen lamp and modulated. The spectrum of the reflected light of the sensor cavity is detected by a spectrometer. The captured spectrum is used to obtain the cavity length of the sensor. The cavity length {{math|d}} corresponds to the applied pressure and is determined by the spectrum of the reflection of the light of the sensor. This pressure value is subsequently displayed on a screen. The cavity length <math>d</math> is determined using
| |
| | |
| <math>d= \frac{\lambda_1 \lambda_2}{2n(\lambda_2-\lambda_1)} </math>
| |
| | |
| with <math>n</math> as refractive index of the sensor cavity material, <math>\lambda_1</math> and <math>\lambda_2</math> as adjacent peaks in the reflection spectrum.
| |
| | |
| The advantage of using white light interferometry as characterization method is the influence reduction of the bending loss.<ref name="THE2005" />
| |
| | |
| == See also ==
| |
| * [[Wafer bonding]]
| |
| * [[Direct bonding]]
| |
| * [[Plasma activated bonding]]
| |
| * [[Anodic bonding]]
| |
| * [[Eutectic bonding]]
| |
| * [[Glass frit bonding]]
| |
| * [[Adhesive bonding]]
| |
| * [[Thermocompression bonding]]
| |
| * [[Reactive bonding]]
| |
| | |
| == References ==
| |
| <references>
| |
| <ref name="KGH+2010">{{cite news|
| |
| author = Khan, M. F. and Ghavanini, F. A. and Haasl, S. and Löfgren, L. and
| |
| Persson, K. and Rusu, C. and Schjølberg-Henriksen, K. and Enoksson, P.|
| |
| title = Methods for characterization of wafer-level encapsulation applied
| |
| on silicon to LTCC anodic bonding|
| |
| journal = Journal of Micromechanics and Microengineering|
| |
| year = 2010|
| |
| volume = 20|
| |
| pages = 064020|
| |
| number = 6|
| |
| doi = 10.1088/0960-1317/20/6/064020
| |
| }}</ref>
| |
| | |
| <ref name="Cui2008">{{cite news|
| |
| author = Cui, Z.|
| |
| title = Anodic Bonding|
| |
| booktitle = Encyclopedia of Microfluidics and Nanofluidics|
| |
| publisher = Springer Science+Business Media, LLC.|
| |
| year = 2008|
| |
| editor = Li, D.|
| |
| chapter = A|
| |
| pages = 50–54|
| |
| crossref = Wafer bonding|
| |
| isbn = 978-0-387-48998-8
| |
| }}</ref>
| |
| | |
| <ref name="Mac1997">{{cite report|
| |
| author = Mack, S.|
| |
| title = Eine vergleichende Untersuchung der physikalisch-chemischen Prozesse
| |
| an der Grenzschicht direkt und anodischer verbundener Festkörper|
| |
| institution = Max-Planck-Institut|
| |
| year = 1997|
| |
| address = Jena|
| |
| isbn = 3-18-343602-7
| |
| }}</ref>
| |
| | |
| <ref name="Far2008b">{{cite conference|
| |
| author = Farrens, S.|
| |
| title = Metal Based Wafer Level Packaging|
| |
| booktitle = Global SMT & Packaging|
| |
| year = 2008
| |
| }}</ref>
| |
| | |
| <ref name="WMC+1996">{{cite news|
| |
| author = Weldon, M. K. and Marsico, V. E. and Chabal, Y. J. and Hamann, D. R.
| |
| and Christman, S. B. and Chaban, E. E.|
| |
| title = Infrared spectroscopy as a probe of fundamental processes in microelectronics:
| |
| silicon wafer cleaning and bonding|
| |
| journal = Surface Science|
| |
| year = 1996|
| |
| volume = 368|
| |
| pages = 163–178|
| |
| number = 1-3|
| |
| doi = 10.1016/S0039-6028(96)01046-1
| |
| }}</ref>
| |
| | |
| <ref name="LBH+2009">{{cite conference|
| |
| author = Lin, Y.-C. and Baum, M. and Haubold, M. and Fromel, J. and Wiemer,
| |
| M. and Gessner, T. and Esashi, M.|
| |
| title = Development and evaluation of AuSi eutectic wafer bonding|
| |
| booktitle = Solid-State Sensors, Actuators and Microsystems Conference, 2009.
| |
| TRANSDUCERS 2009. International|
| |
| year = 2009|
| |
| pages = 244–247|
| |
| doi = 10.1109/SENSOR.2009.5285519
| |
| }}</ref>
| |
| | |
| <ref name="VJL2005">{{cite news|
| |
| author = Vallin, Ö. and Jonsson, K. and Lindberg, U.|
| |
| title = Adhesion quantification methods for wafer bonding|
| |
| journal = Materials Science and Engineering: R: Reports|
| |
| year = 2005|
| |
| volume = 50|
| |
| pages = 109–165|
| |
| number = 4-5|
| |
| doi = 10.1016/j.mser.2005.07.002
| |
| }}</ref>
| |
| | |
| <ref name="NGM2008">{{cite news|
| |
| author = Nötzold, K. and Graf, J. and Müller-Fiedler, R.|
| |
| title = A four-point-bending-test for the stability assessment of glass frit
| |
| bonded molded microsensors|
| |
| journal = Microelectronics Reliability|
| |
| year = 2008|
| |
| volume = 48|
| |
| pages = 1562–1566|
| |
| number = 8-9|
| |
| doi = 10.1016/j.microrel.2008.07.001
| |
| }}</ref>
| |
| | |
| <ref name="WMW+2010">{{cite conference|
| |
| author = Wünsch, D. and Müller, B. and Wiemer, M. and Gessner, T.
| |
| and Mischke, H.|
| |
| title = Aktivierung mittels Niederdruckplasma zur Herstellung von Si-Verbunden
| |
| im Niedertemperatur-Bereich und deren Charakterisierung mittels Mikro-Chevron-Test|
| |
| booktitle = Technologien und Werkstoffe der Mikrosystem- und Nanotechnik (GMM-Fachbereicht
| |
| Band 65)|
| |
| year = 2010|
| |
| pages = 66–71|
| |
| address = Darmstadt|
| |
| month = May|
| |
| organization = VDE/VDI-Gesellschaft Mikroelektronik, Mikro- und Feinwerktechnik
| |
| (GMM)|
| |
| publisher = VDE Verlag GmbH Berlin Offenbach|
| |
| isbn = 978-3-8007-3253-1
| |
| }}</ref>
| |
| | |
| <ref name="WFJ+2008">{{cite conference|
| |
| author = Wiemer, M. and Frömel, J. and Chenping, J. and Haubold, M.
| |
| and Gessner, T.|
| |
| title = Waferbond technologies and quality assessment|
| |
| booktitle = Electronic Components and Technology Conference, 2008. ECTC 2008.
| |
| 58th|
| |
| year = 2008|
| |
| pages = 319–324|
| |
| doi = 10.1109/ECTC.2008.4549989
| |
| }}</ref>
| |
| | |
| <ref name="PKB2001">{{cite conference|
| |
| author = Petzold, M. and Knoll, H. and Bagdahn, J.|
| |
| title = Strength assessment of wafer-bonded micromechanical components using
| |
| the Micro-Chevron-Test|
| |
| booktitle = Reliability, Testing, and Characterization of MEMS/MOEMS|
| |
| year = 2001|
| |
| doi = 10.1117/12.442994
| |
| }}</ref>
| |
| | |
| <ref name="SRM+2009">{{cite conference|
| |
| author = Schneider, A. and Rank, H. and Müller-Fiedler, R. and Wittler,
| |
| O. and Reichl, H.|
| |
| title = Stabilitätsbewertung eutektisch gebondeter Sensorstrukturen
| |
| auf Waferlevel|
| |
| booktitle = 9. Chemnitzer Fachtagung Mikromechanik & Mikroelektronik|
| |
| year = 2009|
| |
| editor = Hermann, G.|
| |
| pages = 51–56
| |
| }}</ref>
| |
| | |
| <ref name="PDE+2006">{{cite conference|
| |
| author = Petzold, M. and Dresbach, C. and Ebert, M. and Bagdahn, J. and Wiemer,
| |
| M. and Glien, K. and Graf, J. and Müller-Fiedler, R. and Höfer,
| |
| H.|
| |
| title = Fracture mechanical life-time investigation of glass frit-bonded
| |
| sensors|
| |
| booktitle = The Tenth Intersociety Conference on Thermal and Thermomechanical
| |
| Phenomena in Electronics Systems, 2006. ITHERM '06.|
| |
| year = 2006|
| |
| pages = 1343–1348|
| |
| doi = 10.1109/ITHERM.2006.1645501
| |
| }}</ref>
| |
| | |
| <ref name="VWS+2010">{{cite conference|
| |
| author = Vogel, K. and Wünsch, D. and Shaporin, A. and Mehner, J. and Billep, D.
| |
| and Wiemer, D.|
| |
| title = Crack propagation in micro-chevron-test samples of direct bonded
| |
| silicon-silicon wafers|
| |
| booktitle = 9th Youth Symposium on Experimental Solid Mechanics|
| |
| year = 2010|
| |
| number = 15|
| |
| pages = 44–47
| |
| }}</ref>
| |
| | |
| <ref name="Wya2002">{{cite news|
| |
| author = Wyant, J. C.|
| |
| title = White Light Interferometry|
| |
| journal = Proceedings of SPIE|
| |
| year = 2002|
| |
| volume = 4737|
| |
| pages = 98–107|
| |
| booktitle = Proceedings of SPIE
| |
| }}</ref>
| |
| | |
| <ref name="oDef2003">{{cite news|
| |
| title = Method 2019.7 (Die Shear Strength)|
| |
| work = Department of Defense|
| |
| institution = Test Method Standard Microcircuits (MIL-STD-883F)|date=March 2003|
| |
| editor = Department of Defense
| |
| }}</ref>
| |
| | |
| <ref name="THE2005">{{cite news|
| |
| author = Totsu, K. and Haga, Y. and Esashi, M.|
| |
| title = Ultra-miniature fiber-optic pressure sensor using white light interferometry|
| |
| journal = Journal of Micromechanics and Microengineering|
| |
| year = 2005|
| |
| volume = 15|
| |
| pages = 71–75|
| |
| number = 1|
| |
| url = http://stacks.iop.org/0960-1317/15/i=1/a=011
| |
| }}</ref>
| |
| | |
| <ref name="STA2008">{{cite news|
| |
| author = Sood, S. and Thomas, R. and Adams, T.|
| |
| title = Acoustic Characterization of Bonded Wafers|
| |
| journal = ECS Transactions|
| |
| year = 2008|
| |
| volume = 16|
| |
| pages = 425–428|
| |
| doi = 10.1149/1.2982896
| |
| }}</ref>
| |
| | |
| </references>
| |
| | |
| [[Category:Electronics manufacturing]]
| |
| [[Category:Packaging (microfabrication)]]
| |
| [[Category:Wafer bonding]]
| |
| [[Category:Microtechnology]]
| |
| [[Category:Semiconductor device fabrication]]
| |