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'''HgCdTe''' or '''[[mercury (element)|mercury]] [[cadmium]] [[telluride (chemistry)|telluride]]''' (also '''cadmium mercury telluride''', '''MCT''', '''MerCad Telluride''', '''MerCadTel''', '''MerCaT''' or '''CMT''') is narrow [[Direct and indirect band gaps|direct bandgap]] [[Cubic_crystal_system#Zincblende_structure|zincblende]] II-VI ternary alloy of [[Cadmium telluride|CdTe]] and [[HgTe]] with a tunable bandgap spanning the shortwave infrared to the very long wave infrared regions. The amount of cadmium (Cd) in the alloy (the alloy composition) can be chosen so as to tune the optical absorption of the material to the desired [[infrared]] [[wavelength]].
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CdTe is a [[semiconductor]] with a [[bandgap]] of approximately 1.5 [[electronvolt|eV]] at room temperature. HgTe is a [[semimetal]], hence its bandgap energy is zero. Mixing these two substances allows one to obtain any bandgap between 0 and 1.5 eV.


[[Image:HgCdTe Eg vs x.PNG|thumb|260px|Energy gap as a function of cadmium composition.]]
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[[Image:Sphalerite-unit-cell-depth-fade-3D-balls.png|150px|thumb|A zincblende unit cell]]
HgCdTe has a [[Cubic_crystal_system#Zincblende_structure|zincblende]] structure with two interpenetrating face-centered cubic lattices offset by (1/4,1/4,1/4)a<sub>o</sub> in the primitive cell. The cations (Cd or Hg) form the yellow sublattice while the Te anions form the blue sublattice per the diagram to the left.


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The [[electron mobility]] of Hg<sub></sub>Cd<sub></sub>Te with a large Hg content is very high. Among common semiconductors used for infrared detection, only [[indium antimonide|InSb]] and [[indium arsenide|InAs]] surpass electron mobility of HgCdTe at room temperature.
At 80 K, the electron mobility of Hg<sub>0.8</sub>Cd<sub>0.2</sub>Te can be several hundred thousand cm<sup>2</sup>/(V·s). Electrons also have a long ballistic length at this temperature; their [[mean free path]] can be several micrometres.


The intrinsic carrier concentration is given by <ref>{{cite journal|last=Schmidt|coauthors=Hansen|title=Calculation of intrinsic carrier concentration in HgCdTe|journal=Journal of Applied Physics|year=1983|volume=54}}</ref>
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<math>n_{i}(t,x) = (5.585 - 3.82x + (1.7531^{-3})t - 1.36411^{-3}t\cdot x)\cdot 10^{14}\cdot E_{g}(t,x)^{0.75}\cdot T^{1.5} \cdot e^{\frac{-E_{g}(t,x)\cdot q}{2\cdot k\cdot t}}</math>
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where k is Boltzmann's constant, q is the elementary electric charge, t is the material temperature, x is the percentage of cadmium concentration, and E.g. is the bandgap given by <ref>{{cite journal|last=Hansen|title=Energy gap versus alloy composition and temperature in HgCdTe|journal=Journal of Applied Physics|year=1982|volume=53}}</ref>
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| footer = Relationship between bandgap and cutoff wavelength
| image1 = Hgcdte bandgap x t.png
| caption1 = HgCdTe Bandgap in electron volts as a function of x composition and temperature
| image2 = Hgcdte cutoff wavelength x t.png
| caption2 = HgCdTe cutoff wavelength in [[µm]] as function of x composition and temperature.
}}


<math>E_{g}(t,x) = -0.302 + 1.93\cdot x+(5.35\cdot 10^{-4})\cdot t\cdot (1-2\cdot x)-0.31\cdot x^{2}+0.832\cdot x^{3}</math>
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Using the relationship <math>\lambda _{p} = \frac{1.24}{E_{g}}</math>, where lamba is in µm and E.g. is in electron volts, one can also obtain the cutoff wavelength as a function of x and t:
 
<math>\lambda _{p} = (-0.244 + 1.556\cdot x + (4.31\cdot 10^{-4})\cdot t\cdot (1-2\cdot x) - 0.65\cdot x^{2} + 0.671\cdot x^{3})^{-1}</math>
 
====Minority carrier lifetime====
 
=====Auger recombination=====
Two types of Auger recombination affect HgCdTe: Auger 1 and Auger 7 recombination. Auger 1 recombination involves two electrons and one hole, where an electron and a hole combine and the remaining electron receives energy equal to or greater than the band gap. Auger 7 recombination is similar to Auger 1, but involves one electron and two holes.
 
The Auger 1 minority carrier lifetime for intrinsic (undoped) HgCdTe is given by<ref>{{cite journal|last=Kinch|title=Minority Carrier Lifetime in p-HgCdTe|journal=Journal of Electronic Materials|year=2005|volume=34}}</ref>
 
<math>\tau _{Auger1}(t,x) = \frac{2.12\cdot 10^{-14}\cdot \sqrt{E_{g}(t,x)}\cdot e^{\frac{q\cdot E_{g}(t,x)}{k\cdot t}}}{FF^{2}\cdot (\frac{k\cdot t}{q})^{1.5}}</math>
 
where FF is the overlap integral (approximately 0.221).
 
The Auger 1 minority carrier lifetime for doped HgCdTe is given by <ref>{{cite journal|last=Redfern|title=Diffusion Length Measurements in p-HgCdTe Using Laser Beam Induced Current|journal=Journal of Electronic Materials|year=2001|volume=30}}</ref>
 
<math>\tau _{Auger1_{doped}}(t,x,n) = \frac{2\cdot \tau _{Auger1(t,x)}}{1+(\frac{n}{n_{i}(t,x)})^{2}}</math>
 
where n is the equilibrium electron concentration.
 
The Auger 7 minority carrier lifetime for intrinsic HgCdTe is approximately 10 times longer than the Auger 1 minority carrier lifetime:
 
<math>\tau _{Auger7}(t,x) = 10\cdot \tau _{Auger1}(t,x)</math>
 
The Auger 7 minority carrier lifetime for doped HgCdTe is given by
 
<math>\tau _{Auger7_{doped}}(t,x,n) = \frac{2\cdot \tau _{Auger7(t,x)}}{1+(\frac{n_{i}(t,x)}{n})^{2}}</math>
 
The total contribution of Auger 1 and Auger 7 recombination to the minority carrier lifetime is computed as
 
<math>\tau _{Auger}(t,x) = \frac{\tau _{Auger1}(t,x)\cdot \tau _{Auger7}(t,x)}{\tau _{Auger1}(t,x)+ \tau _{Auger7}(t,x)}</math>
 
===Mechanical===
HgCdTe is a soft material due to the weak bonds Hg forms with tellurium. It is a softer material than any common III-V semiconductor.  The Mohs [[hardness]] of HgTe is 1.9, CdTe is 2.9 and Hg<sub>0.5</sub>Cd<sub>0.5</sub>Te is 4. The hardness of lead salts is lower still.
 
===Thermal===
The [[thermal conductivity]] of HgCdTe is low; at low cadmium concentrations it is as low as 0.2&nbsp;W&middot;K<sup>−1</sup>m<sup>−1</sup>. This means that it is unsuitable for high power devices. Although infrared [[light-emitting diode]]s and lasers have been made in HgCdTe, they must be operated cold to be efficient. The [[specific heat capacity]] is 150&nbsp;J·kg<sup>−1</sup>K<sup>−1</sup>.<ref>{{cite journal|doi=10.1088/1464-4258/8/1/014|title=Analysis of laser damage threshold and morphological changes at the surface of a HgCdTe crystal|year=2006|last1=Chen|first1=C S|last2=Liu|first2=A H|last3=Sun|first3=G|last4=He|first4=J L|last5=Wei|first5=X Q|last6=Liu|first6=M|last7=Zhang|first7=Z G|last8=Man|first8=B Y|journal=Journal of Optics A: Pure and Applied Optics|volume=8|pages=88}}</ref>
 
===Optical===
HgCdTe is transparent in the infrared at photon energies below the energy gap. The [[refractive index]] is high, reaching nearly 4 for HgCdTe with high Hg content.
 
==Infrared detection==
HgCdTe is the only common material that can [[infrared detector|detect infrared radiation]] in both of the accessible [[atmospheric windows]]. These are from 3 to 5&nbsp;µm (the mid-wave infrared window, abbreviated [[MWIR]]) and from 8 to 12&nbsp;µm (the long-wave window, [[LWIR]]). Detection in the MWIR and LWIR windows is obtained using 30% [(Hg<sub>0.7</sub>Cd<sub>0.3</sub>)Te] and 20% [(Hg<sub>0.8</sub>Cd<sub>0.2</sub>)Te] cadmium respectively. HgCdTe can also detect in the short wave infrared [[SWIR]] atmospheric windows of 2.2 to 2.4&nbsp;µm and 1.5 to 1.8&nbsp;µm.
 
HgCdTe is a common material in [[photodetector]]s of [[Fourier transform infrared spectroscopy|Fourier transform infrared spectrometers]]. It is also found in military field, [[remote sensing]] and [[infrared astronomy]] research. Military technology has depended on HgCdTe for [[night vision]]. In particular, the [[USAF|US air force]] makes extensive use of HgCdTe on all aircraft, and to equip airborne [[Precision-guided munition|smart bomb]]s. A variety of heat-seeking missiles are also equipped with HgCdTe detectors. HgCdTe detector arrays can also be found at most of the worlds major research [[telescope]]s including several satellites. Many HgCdTe detectors (such as ''[[Mauna Kea Observatory|Hawaii]]'' and ''[[Near Infrared Camera and Multi-Object Spectrometer|NICMOS]]'' detectors) are named after the astronomical observatories or instruments for which they were originally developed.
 
The main limitation of LWIR HgCdTe-based detectors is that they need cooling to temperatures near that of [[liquid nitrogen]] (77K), to reduce noise due to thermally excited current carriers (see cooled [[infrared camera]]). MWIR HgCdTe cameras can be operated at temperatures accessible to [[thermoelectric]] coolers with a small performance penalty. Hence, HgCdTe detectors are relatively heavy compared to [[bolometer]]s and require maintenance. On the other side, HgCdTe enjoys much higher speed of detection (frame rate) and is significantly more sensitive than some of its more economical competitors.
 
HgCdTe is often a material of choice for detectors in Fourier-transform infrared (FTIR) spectrometers. This is because of the large spectral range of HgCdTe detectors and also the high quantum efficiency.
 
HgCdTe can be used as a [[heterodyne]] detector, in which the interference between a local source and returned laser light is detected. In this case it can detect sources such as CO<sub>2</sub> lasers. In heterodyne detection mode HgCdTe can be uncooled, although greater sensitivity is achieved by cooling. Photodiodes, photoconductors or photoelectromagnetic (PEM) modes can be used. A bandwidth well in excess of 1&nbsp;GHz can be achieved with photodiode detectors.
 
The main competitors of HgCdTe are less sensitive Si-based [[bolometer]]s (see uncooled [[infrared camera]]), [[InSb]] and photon-counting [[superconducting tunnel junction]] (STJ) arrays. [[Quantum well infrared photodetector]]s (QWIP), manufactured from III-V semiconductor materials such as [[GaAs]] and [[AlGaAs]], are another possible alternative, although their theoretical performance limits are inferior to HgCdTe arrays at comparable temperatures and they require the use of complicated reflection/diffraction gratings to overcome certain polarization exclusion effects which impact array [[responsivity]]. In the future, the primary competitor to HgCdTe detectors may emerge in the form of [[Quantum Dot]] Infrared Photodetectors (QDIP), based on either a [[colloidal]] or type-II [[superlattice]] structure. Unique 3-D [[quantum confinement]] effects, combined with the unipolar (non-[[exciton]] based [[photoelectric]] behavior) nature of quantum dots could allow comparable performance to HgCdTe at significantly higher [[operating temperature]]s. Initial laboratory work has shown promising results in this regard and QDIPs may be one of the first significant [[nanotechnology]] products to emerge.
 
In HgCdTe, detection occurs when an infrared [[photon]] of sufficient energy kicks an [[electron]] from the [[valence band]] to the [[conduction band]]. Such an electron is collected by a suitable external [[readout integrated circuits]] (ROIC) and transformed into an electric signal. The physical mating of the HgCdTe detector array to the ROIC is often referred to as a "[[Staring array|focal plane array]]".
 
In contrast, in a [[bolometer]], light heats up a tiny piece of material. The temperature change of the bolometer results in a change in resistance which is measured and transformed into an electric signal.
 
[[Mercury zinc telluride]] has better chemical, thermal, and mechanical stability characteristics than HgCdTe. It has a steeper change of energy gap with mercury composition than HgCdTe, making compositional control harder.
 
==HgCdTe growth techniques==
 
===Bulk crystal growth===
The first large scale growth method was bulk recrystallization of a liquid melt. This was the main growth method from the late 1950s to the early 1970s and is the method still employed by one independent supplier www.spitfirenz.com .
 
===Epitaxial growth===
Highly pure and crystalline HgCdTe is fabricated by [[epitaxy]] on either CdTe or [[cadmium zinc telluride|CdZnTe]] substrates. CdZnTe is a [[compound semiconductor]], the lattice parameter of which can be exactly matched to that of HgCdTe. This eliminates most defects from the epilayer of HgCdTe.  CdTe was developed as an alternative substrate in the '90s. It is not lattice-matched to HgCdTe, but is much cheaper, as it can be grown by epitaxy on silicon (Si) or [[germanium]] (Ge) substrates.
 
[[Liquid phase epitaxy]] (LPE), in which a substrate is repeatedly dipped into a liquid melt, gives the best results in terms of crystalline quality, and is still a common technique of choice for industrial production.
 
In recent years, [[molecular beam epitaxy]] (MBE) has become widespread because of its ability to stack up layers of different alloy composition. This allows simultaneous detection at several wavelengths. Furthermore, MBE, and also [[MOVPE]], allow growth on large area substrates such as CdTe on Si or Ge, whereas LPE does not allow such substrates to be used.
 
==See also==
 
===Related materials===
*[[Mercury telluride]], [[Cadmium telluride]], [[Mercury zinc telluride]].
 
===Other infrared detection materials===
*[[Indium antimonide]], [[Indium arsenide]], [[Lead selenide]], [[QWIP]], [[QDIP]].
 
===Other===
*[[Infrared]], [[thermography]].
 
==References==
;Notes
{{reflist}}
;Bibliography
*''Preparation and properties of HgTe and mixed crystals of HgTe-CdTe'', W. D. Lawson, S. Nielson, [[E. H. Putley]], and A. S. Young, J. Phys. Chem. Solids vol. 9, 325–329 (1959). (Earliest known reference)
*''Properties of Narrow-Gap Cadmium-Based Compounds'', Ed. P. Capper (INSPEC, IEE, London, UK, 1994) ISBN 0-85296-880-9
*''HgCdTe Infrared Detectors'', P. Norton, Opto-Electronics Review vol. 10(3), 159–174 (2002) [http://www.wat.edu.pl/review/optor/10(3)159.pdf]
*{{cite journal|doi=10.1088/0034-4885/68/10/R01|title=HgCdTe infrared detector material: history, status and outlook|year=2005|last1=Rogalski|first1=A|journal=Reports on Progress in Physics|volume=68|pages=2267|issue=10}}
*{{cite journal|doi=10.1088/0268-1242/5/3S/021|year=1990|last1=Chen|first1=A B|last2=Lai-Hsu|first2=Y M|last3=Krishnamurthy|first3=S|last4=Berding|first4=M A|journal=Semiconductor Science and Technology|volume=5|pages=S100|title=Band structures of HgCdTe and HgZnTe alloys and superlattices|issue=3S}}
*E. Finkman and Y. Nemirovsky, J. Appl. Phys. 50, 4356 (1979).
*{{cite journal|doi=10.1063/1.333828|title=The exponential optical absorption band tail of Hg1−xCdxTe|year=1984|last1=Finkman|first1=E.|last2=Schacham|first2=S. E.|journal=Journal of Applied Physics|volume=56|pages=2896|issue=10}}
*{{cite journal|doi=10.1117/12.603305|title=HOTEYE: a novel thermal camera using higher operating temperature infrared detectors|year=2005|volume=5783|last1=Bowen|first1=Gavin J.|pages=392}}.
*''Semiconductor Quantum Wells and Superlattices for Long-Wavelength Infrared Detectors'' M.O. Manasreh, Editor (Artech House, Norwood, MA), ISBN 0-89006-603-5 (1993).
 
==External links==
<!--*[http://www.onr.navy.mil/sci_tech/information/312_electronics/ncsr/materials/hgcdte.asp US National compound Semiconductor Roadmap] at the [[Office of Naval Research]].-->
*[http://www.npi.gov.au/database/substance-info/profiles/53.html National Pollutant Inventory - Mercury and compounds Fact Sheet]
*[http://www.i3system.com  Korea i3system in Daejeon]
 
[[Category:Alloys]]
[[Category:Mercury compounds]]
[[Category:Cadmium compounds]]
[[Category:Tellurides]]
[[Category:Semiconductor materials]]
[[Category:Infrared sensor materials]]

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