File:Silicon dislocation orientation 111 mag 500x 2.png
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Original file (768 × 576 pixels, file size: 574 KB, MIME type: image/png)
Summary
| Description |
Title: Dislocation in Si crystal, orientation 111
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| Date | 13 September 2005 (original upload date) |
| Source | No machine-readable source provided. Own work assumed (based on copyright claims). |
| Author | No machine-readable author provided. Twisp assumed (based on copyright claims). |
Licensing
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I, the copyright holder of this work, release this work into the public domain. This applies worldwide. In some countries this may not be legally possible; if so: I grant anyone the right to use this work for any purpose, without any conditions, unless such conditions are required by law. |
File history
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 02:17, 13 September 2005 | | 768 × 576 (574 KB) | wikimediacommons>Twisp | * Title: Dislocation in Si crystal, orientation 111 * Desc: Image of dislocation in Si crystal made using interference microscope with 500x magnification. Crystal orientation can be determined by the triangular (pyramidal) shape of the dislocation. * Auth |
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