Friedlander–Iwaniec theorem: Difference between revisions

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{{Expert-subject|Physics|date=October 2008}}
 
'''Variable-range hopping''', or [[Nevill Francis Mott|Mott]] variable-range hopping, is a model describing low-temperature [[Electrical conduction|conduction]] in strongly disordered systems with [[Anderson localization|localized]] charge-carrier states.<ref>{{cite journal|author=Mott, N.F.|journal=Phil. Mag.|volume=19|page=835|year=1969}}</ref>
 
It has a characteristic temperature dependence of
:<math>\sigma= \sigma_0e^{-(T_0/T)^{1/4}}</math>
for three-dimensional conductance, and in general for ''d''-dimensions
:<math>\sigma= \sigma_0e^{-(T_0/T)^{1/(d+1)}}</math>.
 
Hopping conduction at low temperatures is of great interest because of the savings the semiconductor industry could achieve if they were able to replace single-crystal devices with glass layers.<ref>P.V.E. McClintock, D.J. Meredith, J.K. Wigmore. ''Matter at Low Temperatures''. Blackie. 1984 ISBN 0-216-91594-5.</ref>
 
==Derivation==
The original Mott paper introduced a simplifying assumption that the hopping energy depends inversely on the cube of the hopping distance (in the three-dimensional case). Later it was shown that this assumption was unnecessary, and this proof is followed here.<ref>{{cite journal|author=Apsley, N. and Hughes, H.P.|journal=Phil. Mag.|volume=30|page=963|year=1974}}</ref>  In the original paper, the hopping probability at a given temperature was seen to depend on two parameters, ''R'' the spatial separation of the sites, and ''W'', their energy separation.  Apsley and Hughes noted that in a truly amorphous system, these variables are random and independent and so can be combined into a single parameter, the ''range'' <math>\textstyle\mathcal{R}</math> between two sites, which determines the probability of hopping between them.
 
Mott showed that the probability of hopping between two states of spatial separation <math>\textstyle R</math> and energy separation ''W'' has the form:
:<math>P\sim \exp \left[-2\alpha R-\frac{W}{kT}\right]</math>
where α<sup>−1</sup> is the attenuation length for a hydrogen-like localised wave-function. This assumes that hopping to a state with a higher energy is the rate limiting process.
 
We now define <math>\textstyle\mathcal{R} = 2\alpha R+W/kT</math>, the ''range'' between two states, so <math>\textstyle P\sim \exp (-\mathcal{R})</math>.  The states may be regarded as points in a four-dimensional random array (three spatial coordinates and one energy coordinate), with the `distance' between them given by the range <math>\textstyle\mathcal{R}</math>.
 
Conduction is the result of many series of hops through this four-dimensional array and as short-range hops are favoured, it is the average nearest-neighbour `distance' between states which determines the overall conductivity.  Thus the conductivity has the form
:<math>\sigma \sim \exp (-\overline{\mathcal{R}}_{nn})</math>
where <math>\textstyle\overline{\mathcal{R}}_{nn}</math>is the average nearest-neighbour range. The problem is therefore to calculate this quantity.
 
The first step is to obtain <math>\textstyle\mathcal{N}(\mathcal{R})</math>, the total number of states within a range <math>\textstyle\mathcal{R}</math> of some initial state at the Fermi level. For ''d''-dimensions, and under particular assumptions this turns out to be
:<math>\mathcal{N}(\mathcal{R}) = K \mathcal{R}^{d+1}</math>
where <math>\textstyle K = \frac{N\pi kT}{3\times 2^d \alpha^d}</math>.
The particular assumptions are simply that <math>\textstyle\overline{\mathcal{R}}_{nn}</math> is well less than the band-width and comfortably bigger than the interatomic spacing.
 
Then the probability that a state with range <math>\textstyle\mathcal{R}</math> is the nearest neighbour in the four-dimensional space (or in general the (''d''+1)-dimensional space) is
:<math>P_{nn}(\mathcal{R}) = \frac{\partial \mathcal{N}(\mathcal{R})}{\partial \mathcal{R}} \exp [-\mathcal{N}(\mathcal{R})]</math>
the nearest-neighbour distribution.
 
For the ''d''-dimensional case then
:<math>\overline{\mathcal{R}}_{nn} = \int_0^\infty (d+1)K\mathcal{R}^{d+1}\exp (-K\mathcal{R}^{d+1})d\mathcal{R}</math>.
 
This can be evaluated by making a simple substitution of <math>\textstyle t=K\mathcal{R}^{d+1}</math> into the [[gamma function]], <math>\textstyle \Gamma(z) = \int_0^\infty  t^{z-1} e^{-t}\,\mathrm{d}t</math>
 
After some algebra this gives
:<math>\overline{\mathcal{R}}_{nn} = \frac{\Gamma(\frac{d+2}{d+1})}{K^{\frac{1}{d+1}}}</math>
and hence that
:<math>\sigma \propto \exp \left(-T^{-\frac{1}{d+1}}\right)</math>.
 
==Non-constant density of states==
When the [[density of states]] is not constant (odd power law N(E)), the Mott conductivity is also recovered, as shown in [http://hal.archives-ouvertes.fr/ccsd-00004661 this article].
 
==See also==
{{Portal|Physics}}
* [[Coulomb gap]]
* [[Mobility edge]]
* [[Bloch wave]]
 
== Notes ==
{{reflist}}
 
<!-- '''Sadly''', it is still not widely recognised that the "simplifying assumption" (as it is described above) in the Mott derivation is actually a serious fundamental error, in that it simultaneously employs a distance R to represent two very different parameters - the '''''actual''''' distance hopped and the radius of the sphere '''''within which''''' hopping occurs! Simple averaging of the hopping distance to yield 3/4 of the sphere radius (N.F.Mott and E.A.Davis, ''Electronic Processes in Non-Crystalline Materials'', 2nd Edition (Clarendon Press, Oxford, 1979)) is also inappropriate, since it fails to apply the necessary weightings to tunnelling over various distances within the sphere.
 
The above derivation, albeit in a more complex 4-dimensional formulation, contains a corresponding error in respect of the phrase "the total number of states '''''within''''' a range R of some initial state at the Fermi level". A more appropriate approach would be to consider the states within a '''''surface''''' element (dR) of a sphere of radius R, (i.e. 4.pi.R<sup>2</sup>.dR) and then (possibly?) include their resulting average energy spacing in maximizing the hopping probability. Of course, (a) this would not lead to a T<sup>-1/4</sup> dependence, due to the R<sup>2</sup> rather than R<sup>3</sup> term, and (b) the resulting value would be subject to some arbitrary assumption regarding an appropriate value of dR.  
 
As a consequence of these errors, values of the density of hopping states (DOS) close to the Fermi level, and of other associated parameters (as calculated using the parameter ''T<sub>0</sub>'' above) have often been totally physically unreasonable (DOS values in excess of 10<sup>39</sup> /cm<sup>3</sup>/eV have been obtained, and values of 10<sup>28</sup> are not untypical! - D.K.Paul and S.S.Mitra, Phys. Rev. Lett., '''31''', 1000 (1973) is a good example). (Actual DOS values are not expected to exceed 10<sup>21</sup> /cm<sup>3</sup>/eV without metallic conduction becoming dominant (N.F.Mott and E.A.Davis, as referenced above, p.359)). It has also frequently been observed that a T<sup>-1/4</sup> relationship is by no means the best fit to experimental data.
 
This does not mean that the underlying '''''qualitative''''' concept of "variable-range hopping" (i.e. the obvious tendency to favour a more spatially distant site with a smaller hopping-energy requirement at sufficiently low temperatures) is invalid. It simply means that the ('''''unfortunately still''''') unquestioning application of the Mott model to infer the associated material properties is entirely inappropriate.   
 
J.M.Marshall and C.Main, J. Physics: Condensed Matter '''20''', 285210 (2008) provides extensive further detail and examples, and also advances an alternative model which eliminates these massive discrepancies.-->
 
[[Category:Electrical phenomena]]
[[Category:Condensed matter physics]]

Revision as of 20:38, 25 December 2013

Template:Expert-subject

Variable-range hopping, or Mott variable-range hopping, is a model describing low-temperature conduction in strongly disordered systems with localized charge-carrier states.[1]

It has a characteristic temperature dependence of

for three-dimensional conductance, and in general for d-dimensions

.

Hopping conduction at low temperatures is of great interest because of the savings the semiconductor industry could achieve if they were able to replace single-crystal devices with glass layers.[2]

Derivation

The original Mott paper introduced a simplifying assumption that the hopping energy depends inversely on the cube of the hopping distance (in the three-dimensional case). Later it was shown that this assumption was unnecessary, and this proof is followed here.[3] In the original paper, the hopping probability at a given temperature was seen to depend on two parameters, R the spatial separation of the sites, and W, their energy separation. Apsley and Hughes noted that in a truly amorphous system, these variables are random and independent and so can be combined into a single parameter, the range between two sites, which determines the probability of hopping between them.

Mott showed that the probability of hopping between two states of spatial separation and energy separation W has the form:

where α−1 is the attenuation length for a hydrogen-like localised wave-function. This assumes that hopping to a state with a higher energy is the rate limiting process.

We now define , the range between two states, so . The states may be regarded as points in a four-dimensional random array (three spatial coordinates and one energy coordinate), with the `distance' between them given by the range .

Conduction is the result of many series of hops through this four-dimensional array and as short-range hops are favoured, it is the average nearest-neighbour `distance' between states which determines the overall conductivity. Thus the conductivity has the form

where is the average nearest-neighbour range. The problem is therefore to calculate this quantity.

The first step is to obtain , the total number of states within a range of some initial state at the Fermi level. For d-dimensions, and under particular assumptions this turns out to be

where . The particular assumptions are simply that is well less than the band-width and comfortably bigger than the interatomic spacing.

Then the probability that a state with range is the nearest neighbour in the four-dimensional space (or in general the (d+1)-dimensional space) is

the nearest-neighbour distribution.

For the d-dimensional case then

.

This can be evaluated by making a simple substitution of into the gamma function,

After some algebra this gives

and hence that

.

Non-constant density of states

When the density of states is not constant (odd power law N(E)), the Mott conductivity is also recovered, as shown in this article.

See also

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Notes

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